View BDX42_778546.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D100
BDX42; BDX43; BDX44 NPN Darlington transistors
Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jul 02
Philips Semiconductors
Product specification
NPN Darlington transistors
FEATURES * High current (max. 1 A) * Low voltage (max. 80 V) * Integrated diode and resistor. APPLICATIONS * Industrial switching applications such as: - print hammers - solenoids - relay and lamp drivers.
handbook, halfpage
BDX42; BDX43; BDX44
PINNING PIN 1 2 3 emitter collector, connected to metal part of mounting surface base DESCRIPTION
2 3
DESCRIPTION NPN Darlington transistor in a TO-126; SOT32 plastic package. PNP complements: BDX45 and BDX47.
1
1
2
3
Top view
MAM349
Fig.1
Simplified outline (TO-126; SOT32) and symbol.
QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage BDX42 BDX43 BDX44 VCES collector-emitter voltage BDX42 BDX43 BDX44 IC Ptot hFE fT collector current (DC) total power dissipation DC current gain transition frequency Tamb 25 C Tmb 100 C IC = 150 mA; VCE = 10 V IC = 500 mA; VCE = 10 V IC = 500 mA; VCE = 5 V; f = 100 MHz VBE = 0 - - - - - - 1000 2000 - - - - - - - - - 200 45 60 80 1 1.25 5 - - - MHz V V V A W W open emitter - - - - - - 60 80 90 V V V CONDITIONS MIN. TYP. MAX. UNIT
1997 Jul 02
2
Philips Semiconductors
Product specification
NPN Darlington transistors
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BDX42 BDX43 BDX44 VCES collector-emitter voltage BDX42 BDX43 BDX44 VEBO IC ICM IB Ptot Tstg Tj Tamb emitter-base voltage collector current (DC) peak collector current base current (DC) total power dissipation storage temperature junction temperature operating ambient temperature Tamb 25 C Tmb 100 C open collector VBE = 0 PARAMETER collector-base voltage CONDITIONS open emitter
BDX42; BDX43; BDX44
MIN. - - - - - - - - - - - - -65 - -65
MAX. 60 80 90 45 60 80 5 1 2 100 1.25 5 +150 150 +150 V V V V V V V A A
UNIT
mA W W C C C
THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-mb PARAMETER thermal resistance from junction to ambient thermal resistance from junction to mounting base CONDITIONS in free air VALUE 100 10 UNIT K/W K/W
1997 Jul 02
3
Philips Semiconductors
Product specification
NPN Darlington transistors
CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL ICBO BDX42 BDX43 BDX44 ICES collector cut-off current BDX42 BDX43 BDX44 IEBO hFE emitter cut-off current DC current gain VBE = 0; VCE = 45 V VBE = 0; VCE = 60 V VBE = 0; VCE = 80 V IC = 0; VEB = 4 V VCE = 10 V; see Fig. 2 IC = 150 mA IC = 500 mA VCEsat VCEsat collector-emitter saturation voltage IC = 500 mA; IB = 0.5 mA PARAMETER collector cut-off current IE = 0; VCB = 60 V IE = 0; VCB = 80 V IE = 0; VCB = 100 V CONDITIONS
BDX42; BDX43; BDX44
MIN. - - - - - - -
TYP. MAX. UNIT - - - - - - - 100 100 100 50 50 50 50 - - 1.3 1.3 1.6 1.6 1.6 1.8 1.9 2.2 2.2 - V V V V V V V V V MHz nA nA nA nA nA nA nA
1000 - 2000 - - - - - - - - - - - - - - - - - - 200 - - - - - -
IC = 500 mA; IB = 0.5 mA; Tj = 150 C collector-emitter saturation voltage BDX42; BDX44 VCEsat collector-emitter saturation voltage BDX43 VBEsat VBEsat VBEsat fT ton td tr toff ts tf base-emitter saturation voltage base-emitter saturation voltage BDX42; BDX44 base-emitter saturation voltage BDX43 transition frequency IC = 500 mA; VCE = 5 V; f = 100 MHz ICon = 500 mA; IBon = 0.5 mA; IBoff = -0.5 mA Switching times (between 10% and 90% levels); see Fig.3 turn-on time delay time rise time turn-off time storage time fall time IC = 1 A; IB = 1 mA IC = 1 A; IB = 1 mA IC = 1 A; IB = 1 mA; Tj = 150 C IC = 500 mA; IB = 0.5 mA IC = 1 A; IB = 4 mA IC = 1 A; IB = 4 mA IC = 1 A; IB = 4 mA; Tj = 150 C
- - - - - - - -
500 200 300 950 350
ns ns ns ns ns
1300 ns
1997 Jul 02
4
Philips Semiconductors
Product specification
NPN Darlington transistors
BDX42; BDX43; BDX44
handbook, full pagewidth
5000
MGD838
hFE 4000
3000
2000
1000
0 10-1
1
10
102
IC (mA)
103
VCE = 10 V.
Fig.2 DC current gain; typical values.
ndbook, full pagewidth
VBB
VCC
RB (probe) oscilloscope 450 Vi R1 R2
RC Vo (probe) 450 DUT oscilloscope
MLB826
Vi = 10 V; T = 200 s; tp = 6 s; tr = tf 3 ns. R1 = 56 ; R2 = 10 k; RB = 10 k; RC = 18 . VBB = -1.8 V; VCC = 10.7 V. Oscilloscope input impedance Zi = 50 .
Fig.3 Test circuit for switching times.
1997 Jul 02
5
Philips Semiconductors
Product specification
NPN Darlington transistors
PACKAGE OUTLINE
BDX42; BDX43; BDX44
Plastic single-ended leaded (through hole) package; mountable to heatsink, 1 mounting hole; 3 leads SOT32
E
A
P1 P D
L1
L
1 bp
2 wM
3 c Q e e1
0
2.5 scale
5 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 2.7 2.3 bp 0.88 0.65 c 0.60 0.45 D 11.1 10.5 E 7.8 7.2 e 4.58 e1 2.29 L 16.5 15.3 L1(1) max 2.54 Q 1.5 0.9 P 3.2 3.0 P1 3.9 3.6 w 0.254
Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT32 REFERENCES IEC JEDEC TO-126 EIAJ EUROPEAN PROJECTION ISSUE DATE 97-03-04
1997 Jul 02
6
Philips Semiconductors
Product specification
NPN Darlington transistors
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BDX42; BDX43; BDX44
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1997 Jul 02
7
Philips Semiconductors - a worldwide company
Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101, Fax. +43 1 60 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 689 211, Fax. +359 2 689 102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381 China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S, Tel. +45 32 88 2636, Fax. +45 31 57 0044 Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. +358 9 615800, Fax. +358 9 61580920 France: 4 Rue du Port-aux-Vins, BP317, 92156 SURESNES Cedex, Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427 Germany: Hammerbrookstrae 69, D-20097 HAMBURG, Tel. +49 40 23 53 60, Fax. +49 40 23 536 300 Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS, Tel. +30 1 4894 339/239, Fax. +30 1 4814 240 Hungary: see Austria India: Philips INDIA Ltd, Shivsagar Estate, A Block, Dr. Annie Besant Rd. Worli, MUMBAI 400 018, Tel. +91 22 4938 541, Fax. +91 22 4938 722 Indonesia: see Singapore Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200 Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3, 20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +60 3 750 5214, Fax. +60 3 757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +9-5 800 234 7381 Middle East: see Italy Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000, Tel. +27 11 470 5911, Fax. +27 11 470 5494 South America: Rua do Rocio 220, 5th floor, Suite 51, 04552-903 Sao Paulo, SAO PAULO - SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 829 1849 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 3 301 6312, Fax. +34 3 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 632 2000, Fax. +46 8 632 2745 Switzerland: Allmendstrasse 140, CH-8027 ZURICH, Tel. +41 1 488 2686, Fax. +41 1 481 7730 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 Turkey: Talatpasa Cad. No. 5, 80640 GULTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 625 344, Fax.+381 11 635 777
For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1997
Internet: http://www.semiconductors.philips.com
SCA54
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
117047/00/02/pp8
Date of release: 1997 Jul 02
Document order number:
9397 750 02575

▲Up To Search▲

Price & Availability of BDX42

	To Download BDX42 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .